|
|
|
National Stock Number:
5961-01-107-1052
Federal Supply Class:
5961
National Item Identification Number:
011071052
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
|
Manufacturer Information:
| 848125 | 3B150 | RAYTHEON COMPANY | | 848125 | 49956 | RAYTHEON COMPANY | | A2X1175 | 14844 | FREQUENCY ELECTRONICS INC | | A2X1175 | 21847 | FEI MICROWAVE INC | | 848125 | 54X10 | RAYTHEON COMPANY |
|
Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE2 SEMICONDUCTOR DEVICE DIODE | | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE | | OVERALL HEIGHT | 0.620 INCHES MAXIMUM0.620 INCHES MAXIMUM | | OVERALL LENGTH | 0.500 INCHES MAXIMUM0.500 INCHES MAXIMUM | | OVERALL WIDTH | 0.500 INCHES MAXIMUM0.500 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR150.0 CELSIUS AMBIENT AIR | | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
|
|