5961-01-096-8315, SEMICONDUCTOR DEVICES,UNITIZED

5999-01-096-8314 MOUNTING PAD,ELECTRICAL-ELECTRON

5961-01-096-8317 RECTIFIER,SEMICONDUCTOR DEVICE,U

National Stock Number:
5961-01-096-8315

Federal Supply Class:
5961

National Item Identification Number:
010968315

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

975078-1	3B150	RAYTHEON COMPANY
975078-1	49956	RAYTHEON COMPANY
MD918A	04713	FREESCALE SEMICONDUCTOR, INC.
975078-1	54X10	RAYTHEON COMPANY

Techincal Specification:

COMPONENT NAME AND QUANTITY	2 TRANSISTOR2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
OVERALL DIAMETER	0.335 INCHES MINIMUM AND 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH	0.150 INCHES MINIMUM AND 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM0.185 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINALTERMINAL
SPECIAL FEATURES	ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPNALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
POWER RATING PER CHARACTERISTIC	600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER	0.200 INCHES NOMINAL0.200 INCHES NOMINAL
TERMINAL LENGTH	0.500 INCHES MINIMUM0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY	6 UNINSULATED WIRE LEAD6 UNINSULATED WIRE LEAD

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