5961-01-096-7850 TRANSISTOR Index 5961-01-096-7852 TRANSISTOR

National Stock Number:
5961-01-096-7851

Federal Supply Class:
5961

National Item Identification Number:
010967851

Description:
TRANSISTOR

Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.


Manufacturer Information:
403660206845RAYTHEON COMPANY
4042879-070106845RAYTHEON COMPANY
4043763-080106845RAYTHEON COMPANY
4043763-080306845RAYTHEON COMPANY
60012M50155VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
60013M50155VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
SD1537-24U751ADVANCED SEMICONDUCTOR,INC.
SD1537-257962STMICROELECTRONICS INC
SD1537-557962STMICROELECTRONICS INC
JT237558022R F PRODUCTS, INC


Techincal Specification:
CURRENT RATING PER CHARACTERISTIC14.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASEBASE
INTERNAL CONFIGURATIONJUNCTION CONTACT
MATERIALCERAMIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC115.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
MOUNTING FACILITY QUANTITY2
MOUNTING METHODUNTHREADED HOLE(S)
OVERALL HEIGHT0.225 INCHES NOMINAL
OVERALL LENGTH0.800 INCHES NOMINAL
OVERALL WIDTH0.405 INCHES MINIMUM AND 0.425 INCHES MAXIMUM
SEMICONDUCTOR MATERIALSILICON
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA06845-4043763 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY2 RIBBON AND 1 CASE
TEST DATA DOCUMENT06845-4042879 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN


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