COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND |
| 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND |
| 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
POWER RATING PER CHARACTERISTIC | 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
TRANSFER RATIO | 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | GLASS AND |
| METAL |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.125 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 14 PIN |
OVERALL LENGTH | 0.786 INCHES MAXIMUM |
OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
OVERALL WIDTH | 0.210 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PNP |