5961-01-093-0111, SEMICONDUCTOR DEVICES,UNITIZED

6130-01-093-0112 POWER SUPPLY SUBASSEMBLY

National Stock Number:
5961-01-093-0111

Federal Supply Class:
5961

National Item Identification Number:
010930111

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

308791-2	15280	NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
308791-2	26916	NORTHROP GRUMMAN SYSTEMS CORPORATION
DH3467D/883B	27014	NATIONAL SEMICONDUCTOR CORPORATION
SH70060	27014	NATIONAL SEMICONDUCTOR CORPORATION

Techincal Specification:

COMPONENT NAME AND QUANTITY	4 TRANSISTOR4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
OVERALL HEIGHT	0.200 INCHES MAXIMUM0.200 INCHES MAXIMUM
OVERALL LENGTH	0.786 INCHES MAXIMUM0.786 INCHES MAXIMUM
OVERALL WIDTH	0.210 INCHES MAXIMUM0.210 INCHES MAXIMUM
MATERIAL	GLASS ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION150.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINALTERMINAL
SPECIAL FEATURES	ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PNPALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PNP
POWER RATING PER CHARACTERISTIC	2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
TERMINAL LENGTH	0.125 INCHES MINIMUM0.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY	14 PIN14 PIN
TRANSFER RATIO	120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR

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