| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND |
| 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND |
| 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| TRANSFER RATIO | 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND |
| 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.150 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.080 INCHES MAXIMUM |
| OVERALL WIDTH | 0.150 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |