| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | GERMANIUM ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL REVERSE VOLTAGE, AVERAGE ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 90.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | PLASTIC ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL DIAMETER | 0.125 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| SPECIAL FEATURES | 2EA 1N283 MATCHED W/IN 10PCT CAPACITANCE, EACH 65PCT RECTIFICATION EFFICIENCY MIN. |
| TEST DATA DOCUMENT | 80131-RELEASE 4238 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |