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National Stock Number:
5961-00-925-6281
Federal Supply Class:
5961
National Item Identification Number:
009256281
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 2N2609 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 352-7500-140 | 13499 | ROCKWELL COLLINS, INC. | | 5042-864 | 05869 | RAYTHEON COMPANY | | 5961PL1279173 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH | | 535-431-009 | A1997 | ELETTRONICA SPA | | 535-431-009 | C3141 | ELETTRONICA GMBH | | JAN2N2609 | 21845 | SOLITRON DEVICES, INC. | | 917AS6018-3 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGED ORIGINAL DESIGN ACTIVITY NOT MATERIAL/PARTS SUPPLIER | | 917AS700-38 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGED ORIGINAL DESIGN ACTIVITY NOT MATERIAL/PARTS SUPPLIER | | 697694 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY | | 8879800005-1 | 57057 | NAVCOM DEFENSE ELECTRONICS, INC. | | JAN2N2609 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | JANTXV2N2609 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | CS501046-1 | U2248 | SELEX ELSAG LTD | | MIL-PRF-19500/296 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | MILS19500-296 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | U149 | D9816 | WIMA SPEZIALVERTRIEB ELEKTRONISCHERBAUELEMENTE GMBH & CO.KG |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE | | CURRENT RATING PER CHARACTERISTIC | -10.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | FIELD EFFECT | | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM | | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE | | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500-296 GOVERNMENT SPECIFICATION | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD | | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
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