COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE |
POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL LENGTH | 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL DIAMETER | 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
COMPONENT FUNCTION RELATIONSHIP | MATCHED |
FEATURES PROVIDED | HERMETICALLY SEALED CASE AND |
| QUALITY ASSURANCE LEVEL S |
TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/278 GOVERNMENT SPECIFICATION |
SPEC/STD CONTROLLING DATA | |
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | JAN1N4306 |
MANUFACTURERS CODE | 81349 |
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | MIL-S-19500/278 |