| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR ALL SEMICONDUCTOR DEVICE DIODE |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL HEIGHT | 0.200 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL WIDTH | 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| MATERIAL | GLASS ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 0.900 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |