|
|
|
National Stock Number:
5961-00-884-1351
Federal Supply Class:
5961
National Item Identification Number:
008841351
Description:
SEMICONDUCTOR DEVICE,THYRISTOR
Detail:
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
|
Manufacturer Information:
| 1884-0005 | 28480 | HEWLETT-PACKARD COMPANY | | 1884-0005 | 50434 | AVAGO TECHNOLOGIES US INC | | MCR649P2 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | SCR1075K | 04713 | FREESCALE SEMICONDUCTOR, INC. | | MCR649P2 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
|
Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE | | CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES MAXIMUM FORWARD GATE CURRENT | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS JUNCTION | | MOUNTING FACILITY QUANTITY | 2 | | MOUNTING METHOD | UNTHREADED HOLE(S) | | OVERALL DIAMETER | 0.875 INCHES MAXIMUM | | OVERALL LENGTH | 0.450 INCHES MAXIMUM | | POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN | | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED |
|
|