| COMPONENT NAME AND QUANTITY | 8 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 350.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| INCLOSURE MATERIAL | CERAMIC OR GLASS OR METAL |
| OVERALL HEIGHT | 0.063 INCHES MAXIMUM |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL WIDTH | 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
| PRECIOUS MATERIAL | GOLD |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 0.165 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 10 RIBBON |