| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | BURN IN |
| FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| MATERIAL | GLASS ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 270.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 225.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 1.250 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |