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National Stock Number:
5961-00-275-7574
Federal Supply Class:
5961
National Item Identification Number:
002757574
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 1686-613 | 31361 | WOODWARD, INC. | | 2139644G001 | 28527 | L3HARRIS TECHNOLOGIES, INC. | | 2N5680 | 03864 | AAI/ACL TECHNOLOGIES INC IM AND C DIV | | 2N5680 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N5680 | 21845 | SOLITRON DEVICES, INC. | | 25577-23635 | 30377 | SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS | | 2N5680 | 55464 | CENTRAL SEMICONDUCTOR, LLC | | 2N5680 | 60991 | MICROCHIP TECHNOLOGY INC | | 2N5680 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N5680 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | 2N5680 | C7191 | ADELCO ELEKTRONIK GMBH | | 2N5680A | C7191 | ADELCO ELEKTRONIK GMBH | | 2N5680 | D6528 | LACON ELECTRONIC GMBH | | 2N5680 | F4597 | FREESCALE SEMICONDUCTEURS FRANCE SAS | | 2N5680L | 43611 | MICROSEMI CORP - MASSACHUSETTS | | RELEASE5963 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 84000721-002 | 81873 | WOODWARD HRT INC | | 5961PL0592320 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 | | OVERALL DIAMETER | 0.370 INCHES MAXIMUM | | OVERALL LENGTH | 0.260 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | | TERMINAL LENGTH | 1.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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