| COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 115.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND |
| 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS AND |
| PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.900 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.500 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
| OVERALL WIDTH | 0.450 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | LEADS GOLD |