| INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM ALL TRANSISTOR AND 0.230 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL LENGTH | 0.170 INCHES MINIMUM ALL TRANSISTOR AND 0.210 INCHES MAXIMUM ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE ALL TRANSISTOR AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL ALL TRANSISTOR |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL JUNCTION TYPE ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINOR ALL TRANSISTOR |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |