5961-00-105-0982, SEMICONDUCTOR DEVICES,UNITIZED

National Stock Number:
5961-00-105-0982

Federal Supply Class:
5961

National Item Identification Number:
001050982

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

100401	27160	SLANT-FIN CORP
100401	33013	LOGIMETRICS INC
1400108-28	1PQF4	CAE USA INC.
1854-0280	28480	HEWLETT-PACKARD COMPANY
1400108-28	36378	RAYTHEON TECHNICAL SERVICES COMPANY
100401	C1834	KONTRON AG
MD918	04713	FREESCALE SEMICONDUCTOR, INC.
3000-667	05869	RAYTHEON COMPANY
A1854-0280PS	28480	HEWLETT-PACKARD COMPANY
A1854-0280PS	50434	AVAGO TECHNOLOGIES US INC
1854-0280	50434	AVAGO TECHNOLOGIES US INC
MD918	5V1P1	ON SEMICONDUCTOR CORPORATION
7610011P003	94117	BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
7610011P3	94117	BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
SD4756	04713	FREESCALE SEMICONDUCTOR, INC.
SD4756	5V1P1	ON SEMICONDUCTOR CORPORATION

Techincal Specification:

COMPONENT NAME AND QUANTITY	2 TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND
	15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND
	3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC	550.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
TRANSFER RATIO	50.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL	METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-99
MOUNTING METHOD	TERMINAL
TERMINAL LENGTH	0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER	0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY	8 UNINSULATED WIRE LEAD
OVERALL LENGTH	0.185 INCHES MAXIMUM
OVERALL DIAMETER	0.370 INCHES MAXIMUM
FEATURES PROVIDED	HERMETICALLY SEALED CASE
SPECIAL FEATURES	WEAPON SYSTEM ESSENTIAL; TRANSISTORS JUNCTION PATTERN ARRANGEMENT IS NPN
CRITICALITY CODE JUSTIFICATION	FEAT

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