| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL CONFIGURATION | POINT CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | METAL ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | COMPRESSION ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 1 PIN ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.750 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL DIAMETER | 0.215 INCHES MINIMUM AND |
| 0.220 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FUNCTION FOR WHICH DESIGNED | MICROWAVE AND |
| MIXER |
| FEATURES PROVIDED | BURN IN |